On the Relation of Mechanical Deformation and Electrical Properties of BN Nanotubes
نویسندگان
چکیده
Using a novel in-situ scanning tunneling microscope integrated into a 200kV transmission electron microscope (TEM), we have shown that boron nitride nanotubes (BNNTs) possess remarkable flexibility and convert from insulator to semi-conductor upon bending. To measure the electrical properties, the BNNT was bent between two gold contacts constructing a metal-semiconductor-metal circuit. The resistivity of the BNNT under bending condition was measured to be ~460 MΩ from the experimentally recorded current-voltage data. Our finding suggests that mechanical straining can improve the electrical transport in BN nanotubes via the reduction of the band gap.
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